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  new product ss25s & ss26s vishay general semiconductor document number: 89055 revision: 31-jul-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 2.0 a v rrm 20 v to 60 v i fsm 40 a v f at i f = 2.0 a 0.53 v t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss25s ss26s unit device marking code 25s 26s maximum repetitive peak reverse voltage v rrm 50 60 v maximum average forward rectified current (fig. 1) i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 40 a operating junction temperature range t j , t stg - 55 to + 150 c
new product ss25s & ss26s vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89055 revision: 31-jul-08 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note : (1) p.c.b. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage (1) i f = 1.0 a i f = 2.0 a t a = 25 c v f 0.51 0.60 - 0.75 v i f = 1.0 a i f = 2.0 a t a = 125 c 0.43 0.53 - 0.62 maximum reverse current (2) rated v r t a = 25 c t a = 125 c i r - 1.5 200 10 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss25s ss26s unit typical thermal resistance (1) r ja r jl 100 28 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss26s-e3/61t 0.064 61t 1800 7" di ameter plastic tape and reel ss26s-e3/5at 0.064 5at 7500 13" diameter plastic tape and reel figure 1. forward current derating curve 8 0 100 110 120 130 140 0 1.2 2.4 150 resisti v e or ind u cti v e load p. c . b . m o u nted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas lead temperat u re (c) a v erage for w ard c u rrent ( a) 90 0. 8 2.0 0.4 1.6 figure 2. forward power loss characteristics 1.4 1.2 0. 8 0.4 0.2 0 0 0.4 0. 8 1.2 1.6 2.0 2.4 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 1.0 0.6 d = t p /t t p t
new product ss25s & ss26s vishay general semiconductor document number: 89055 revision: 31-jul-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.4 0.6 0. 8 1.0 1.2 10 100 0.2 0.1 1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 150 c t a = 125 c t a = 25 c 10 20 40 60 0.1 1 10 100 1000 10 000 8 0 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t a = 125 c t a = 150 c t a = 25 c 30 50 70 90 figure 5. typical junction capacitance 100 10 10 100 1000 0.1 1 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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